ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 1 description ACEDC6904B uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. it can be used in a wide variety of applications. features ? v ds =60 v , i d =29a ? r ds(on) @ v gs = 10 v , typ 10m ? r ds(on) @ v gs =4.5 v , typ 12m ab solute maximum ratings parameter symbol max unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v drain current ( continuous ) *ac t a =25 i d 29 a t a = 100 2 0 drain current ( pulsed ) *b i d m 168 a single pulse avalanche energy2 eas 48 mj sin gle pulse avalanched current2 ias 17 a power dissipation t a =25 p d 21 w operating temperature / storage temperature t j /t stg - 55~150 a: the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environme nt with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c: the current rating is based on the t 10s junction to ambient thermal resistance rating. packaging type pd fn3*3 - 8l dfn3*3 - 8l
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 2 ordering i nformation ace dc 6904 b xx + h electrical characteristics t a =25 , unless otherwise specified. parameter symbol test conditions min typ max unit static dra in - source breakdown voltage v (br)dss v gs = 0v, i d = 250a 60 v zero gate voltage drain current i dss1 v ds = 20 v, v gs = 0v 1 a gate threshold voltage v gs(th) v gs = v ds , i ds = 250a 1.2 1.6 2.2 v gate leakage current i gss v gs = 20 v , v ds =0v 100 na drain - source on - state resistance r ds(on) v gs = 10 v , i d = 10 a 10 12 m? v gs = 4.5 v , i d = 8 a 12 15 forward trans c onductance g fs v ds = 10 v , i d = 6 a 11.7 s diode forward voltage v sd i sd = 1 a , v gs = 0v 1 v diode forward current i s 17 a switching total gate charge q g v ds = 30 v, i d = 10 a , v gs = 10 v 39.2 59 nc gate - source charge q gs 5.9 9 nc gate - drain charge q gd 8.5 15 nc turn - on delay time t d( on ) v dd = 10 v, i d = 1 a, v g s = 10 v , r g = 6 9.6 18 ns turn - on rise time t r 28.2 54 ns turn - off delay time t d( off ) 45.3 86 ns turn - off fall time t f 10.9 21 ns dynamic input capacitance c iss v d s = 25 v,v g s = 0 v, f= 1.0mhz 2100 3050 pf output capacitance c oss 165 240 pf reverse transfer capacitance c rss 80 120 pf gate resistance rg v gs =0v, v ds =0 v, f=1mhz 1.6 3.2 pd : pdfn3*3 - 8l nn: dfn3*3 - 8l pb - free halogen - free
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 3 typical performance characteristics
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 4
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 5 packing information pdfn3*3 - 8l symbol dimensions in millimeters dimensions in inches min. max. min. max. a 0.650 0.850 0.026 0.033 a1 0.152 ref 0.008 ref a2 0 - 0.05 0 - 0.002 d 2.900 3.100 0.114 0.122 d1 2.300 2.600 0.091 0.102 e 2.900 3.100 0.114 0.122 e1 3.150 3.450 0.124 0.136 e2 1.535 1.935 0.060 0.078 b 0.200 0.400 0.008 0.018 e 0.550 0.750 0.022 0.030 l 0.300 0.500 0.012 0.020 l1 0.180 0.480 0.007 0.019 l2 0~0.100 0~0.004 l3 0~0.100 0~0.004 h 0.315 0.515 0.012 0.020 9 13 9 13
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 6 packing information dfn 3*3 - 8l symbol dimensions in millimeters dimensions in inches min. nom max. min . nom max. a 0.70 0.75 0.80 0.028 0.030 0.031 a1 0.05 0.002 b 0.24 0.30 0.35 0.009 0.012 0.014 c 0.10 0.15 0.25 0.004 0.006 0.010 d 3.20 3.30 3.40 0.126 0.130 0.134 d1 2.15 2.25 2.35 0.085 0.089 0.093 e 3.20 3.30 3.40 0.126 0.130 0.134 e1 2.13 2.23 2.33 0.084 0.088 0.092 e2 0.30 0.40 0.50 0.012 0.016 0.020 e 3 0.48 0.58 0.68 0.019 0.023 0.027 e 0.65bsc 0.026bsc l 0.30 0.40 0.50 0.012 0.016 0.020
ace dc 6904 b n - channel enhancement mode power mosfet ver 1. 1 7 notes ace does not assume any responsibility for use as crit ical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for sur gical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a criti cal component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://w ww.ace - ele.com/
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